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SemiNex lasers have the following characteristics:
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SemiNex lasers use high precision indium phosphide semiconductor materials to convert electrical energy directly and efficiently into coherent optical energy. SemiNex's proprietary material structure uses a non-conventional doping profile and a unique application of quantum physics that provides superior performance in the areas of:
- Thermal efficiency
- Electrical efficiency
- Total optical power
Electrical efficiency gains are achieved by ensuring less current leakage around the semiconductor quantum wells where electron energy is converted to photonic energy. Higher electrical efficiency, in turn, reduces the heat buildup caused by lost electrons. In addition, the unique design of SemiNex lasers minimizes thermal resistance; thus, the heat generated from the diode is easy to dissipate. Lower heat generation significantly raises the optical power at which the laser can operate. The combination of higher electrical and thermal efficiency allows SemiNex lasers to achieve power levels which exceed current industry performance by 2 to 6 times. (Graph at right).
SemiNex laser devices consist of a single semiconductor laser chip fiber-coupled into 50um, 100um or 200um fiber yielding high optical powers in continuous wave operation. The lasers can be packaged in a hermetic module, which includes a thermal electric cooler and a thermistor (pictured above). This package offers a modular laser unit that is robust and easy to integrate into laser systems. SemiNex also sells chips in uncooled packages or in chip-on-submount or bar-on-submount form to meet specific customer needs.
